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GaAs FET
CLY 5
________________________________________________________________________________________________________
Datasheet
* Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * POUT at VD=3V, f=1.8GHz typ. 26.5 dBm * High efficiency better 55 %
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (taped) Q62702-L90
1 G
Pin Configuration 2 3 4 S D S
Package 1)
CLY 5
CLY 5
SOT 223
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Pulse peak power Total power dissipation (Ts < 80 C)
Ts: Temperature at soldering point
Symbol VDS VDG VGS ID TCh Tstg PPulse Ptot
Values 9 12 -6 1.2 150 -55...+150 9 2
Unit V V V A C C W W
Thermal Resistance Channel-soldering point RthChS 35 K/W
1) Dimensions see chapter Package Outlines
Siemens Aktiengesellschaft
pg. 1/8
17.12.96 HL EH PD21
GaAs FET
Electrical characteristics (TA = 25C , unless otherwise specified) Characteristics Drain-source saturation current
VDS = 3 V VGS = 0 V
CLY 5
typ 800 10 5 -2.8 11.0 max 1200 100 20 -1.8 Unit mA A A V dB
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Symbol
min 600 -3.8 10.5
IDSS ID IG VGS(p) G
Drain-source pinch-off current
VDS = 3 V VGS = -3.8 V
Gate pinch-off current
VDS = 3 V VGS = -3.8 V
Pinch-off Voltage
VDS= 3 V ID=100A
Small Signal Gain*)
VDS = 3 V ID = 350 mA Pin = 0 dBm
f = 1.8 GHz
Small Signal Gain*)
VDS = 5 V ID = 350 mA Pin = 0 dBm
f = 1.8 GHz
G
11.5
12.0
-
dB
Small Signal Gain **)
VDS = 3 V ID = 350 mA Pin = 0 dBm
f = 1.8 GHz
Gp
9.0
9.5
-
dB
Output Power
VDS = 3 V ID = 350 mA Pin = 19 dBm
f = 1.8 GHz
Po
26.5
27
-
dBm
Output Power
VDS = 5 V ID = 350 mA Pin = 21 dBm
f = 1.8 GHz
Po
29.5
30
-
dBm
1dB-Compression Point
VDS = 3 V ID = 350 mA
f = 1.8 GHz
P1dB P1dB
f = 1.8GHz
40
26.5 30 55
-
dBm dBm %
1dB-Compression Point
VDS = 5 V ID = 350 mA
Power Added Efficiency
VDS = 5 V ID = 350 mA Pin = 21 dBm
f = 1.8 GHz
PAE
*) Matching conditions for maximum small signal gain (not identical with power matching conditions!) **) Power matching conditions: f=1.8GHz: Source Match: ms : MAG 0.58; ANG -143; Load Match: ml : MAG 0.76; ANG -116 Siemens Aktiengesellschaft pg. 2/8 17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Compression Power vs. Drain-Source Voltage
f = 1.8GHz; IDS=0.5IDSS
P1dB 40 [dBm] 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
D
80 [%] 70 60 50 40 30 20 10 0
Gain 16 [dB] 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7[V] 8
Drain-Source Voltage
P1dB
2.0 [W] 1.75 1.5 1.25 1.0 0.75 0.5 0.25 0
Output Characteristics
PtotDC
0,9 0,7 0,5 0,3 0,1 0
VGS = 0V VGS = -0.5V VGS = -1V VGS = -1.5V VGS = -2V
0
1
2
3
4
5
6
Drain-Source Voltage [V]
Siemens Aktiengesellschaft
pg. 3/8
17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
typ. Common Source S-Parameters VDS = 3 V ID = 350 mA Zo = 50
f GHz
0,1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.5 1.6 1.8 2 2.2 2.4 2.5 3 3.5 4 4.5 5 5.5 6
S11 MAG
0,98 0.96 0.93 0.9 0.87 0.81 0.77 0.73 0.71 0.7 0.69 0.68 0.69 0.7 0.71 0.72 0.74 0.76 0.78 0.8 0.81 0.85 0.87 0.89 0.9 0.92 0.92 0.92
ANG
-26,6 -39.4 -51.5 -63.1 -73.8 -93.3 -110.3 -125.3 -138.5 -150.4 -161.1 -170.8 172.1 157.3 150.5 144.1 132.2 121.4 111.5 102.5 98 79.2 64 51.4 39.8 29 18.4 8.3
S21 MAG
11.52 11.15 10.6 10.06 9.49 8.34 7.33 6.47 5.75 5.14 4.64 4.2 3.51 2.98 2.76 2.56 2.22 1.94 1.7 1.49 1.39 1.01 0.75 0.59 0.48 0.41 0.35 0.31
ANG
160.7 151.4 142.8 134.9 127.4 114.1 102.5 92.4 83.5 75.2 67.6 60.5 47.2 35.1 29.2 23.6 12.6 2.1 -7.9 -17.4 -21.9 -42.1 -58.1 -70.6 -82.2 -93.1 -103.4 -112.4
S12 MAG
0.01024 0.015 0.01942 0.02323 0.02665 0.03245 0.03711 0.04138 0.04528 0.0489 0.05271 0.05646 0.06393 0.07181 0.07569 0.07941 0.08684 0.09377 0.0998 0.10532 0.1076 0.11638 0.12148 0.12571 0.12914 0.13429 0.13892 0.14142
ANG
79 74.3 69.9 66.1 62.3 57 52.8 49.7 47.3 45.2 43.3 41.6 38 34 32 29.7 24.8 19.7 14.6 9.4 6.7 -6 -17.2 -27.3 -37.2 -47 -57 -66.8
S22 MAG
0.3 0.31 0.33 0.36 0.38 0.4 0.43 0.45 0.47 0.49 0.5 0.51 0.54 0.57 0.58 0.59 0.62 0.65 0.68 0.7 0.71 0.76 0.8 0.84 0.86 0.88 0.9 0.91
ANG
-171.8 -169.3 -169.2 -169.4 -169.4 -172.7 -175.6 -179.4 177.5 174.2 170.8 168.1 161.8 155.6 152.9 149.4 143.2 137 130.9 124.7 121.1 105.6 91.4 78.2 65.6 53.1 40.3 27
Siemens Aktiengesellschaft
pg. 4/8
17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
typ. Common Source S-Parameters VDS = 5 V ID = 350 mA Zo = 50
f GHz
0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.2 1.4 1.5 1.6 1.8 2 2.2 2.4 2.5 3 3.5 4 4.5 5 5.5 6
S11 MAG
0.98 0.95 0.92 0.89 0.86 0.8 0.76 0.72 0.7 0.69 0.68 0.68 0.68 0.7 0.71 0.72 0.75 0.77 0.8 0.82 0.83 0.87 0.89 0.91 0.92 0.93 0.93 0.93
ANG
-26.3 -38.8 -50.8 -62.1 -72.6 -91.7 -108.3 -122.9 -135.9 -147.6 -158.1 -167.7 175.3 160.4 153.6 147.1 135 123.9 113.7 104.3 99.7 80.1 64.4 51.5 39.6 28.8 18.1 8
S21 MAG
13.02 12.58 11.98 11.34 10.68 9.39 8.24 7.27 6.45 5.77 5.2 4.7 3.92 3.31 3.06 2.83 2.43 2.1 1.82 1.58 1.47 1.02 0.74 0.56 0.45 0.37 0.31 0.27
ANG
160.1 150.7 141.9 133.7 126.1 112.4 100.6 90.2 80.9 72.4 64.5 57 43 30.1 24 17.9 6.2 -5 -15.6 -25.7 -30.4 -51.4 -67.4 -79.4 -90.2 -100 -109.2 -117.1
S12 MAG
0.00906 0.01326 0.01702 0.02026 0.02304 0.02771 0.03151 0.0348 0.03798 0.04099 0.04435 0.04784 0.05543 0.06413 0.06865 0.07318 0.08237 0.09121 0.09917 0.10617 0.10916 0.12055 0.12631 0.13053 0.13384 0.13894 0.1434 0.14538
ANG
79.1 73.7 69.3 65.6 61.8 57 53.4 51.2 49.7 48.8 47.9 47.1 45.2 42.2 40.6 38.5 33.7 28.3 22.5 16.7 13.6 -0.8 -13.4 -24.5 -35 -45.2 -55.5 -65.6
S22 MAG
0.15 0.17 0.2 0.23 0.26 0.29 0.33 0.35 0.37 0.4 0.41 0.44 0.47 0.51 0.54 0.55 0.6 0.64 0.67 0.7 0.72 0.78 0.83 0.86 0.88 0.91 0.92 0.92
ANG
-153.9 -148.4 -148.5 -149.9 -150.6 -155.5 -159.4 -164.1 -167.6 -171.3 -174.9 -177.8 175.4 168.7 165.5 161.7 154.6 147.5 140.4 133.3 129.1 111.6 95.8 81.3 67.9 54.9 41.7 28
Additional S-Parameter available on CD
Siemens Aktiengesellschaft
pg. 5/8
17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Total Power Dissipation
Ptot = f(Ts)
Ptot 3.2 [W] 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 0 50 100 C Ts
O
150
Permissible Pulse Load
Ptotmax/PtotDC = f(tp)
Siemens Aktiengesellschaft
pg. 6/8
17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
CLY5 Power GaAs-FET Matching Conditions
Definition:
Measured Data:
Typ f [GHz] 0.9 VDS [V] 3 5 6 3 5 6 3 5 6 3 5 6 ID [mA] 350 350 350 350 350 350 350 350 350 350 350 350 P-1dB [dBm] 25.8 29.2 29.8 26.5 30.0 30.6 26.5 30.0 30.5 25.0 29.1 30.5 Gain [dB] 15.6 16.3 17.2 11.0 11.5 12.6 9.5 10.0 10.0 8.4 8.7 8.9
ms MAG 0.50 0.52 0.58 0.63 0.59 0.64 0.58 0.56 0.58 0.62 0.60 0.65
ms ANG 133 144 143 -167 -164 -165 -143 -140 -133 -108 -109 -112
ml MAG 0.70 0.61 0.54 0.74 0.69 0.55 0.76 0.71 0.69 0.68 0.66 0.68
ml ANG -154 -156 -168 -126 -126 -132 -116 -118 -119 -105 -105 -106
CLY5
1.5
1.8
2.4
Note: Gain is small signal gain @ ms and ml
Siemens Aktiengesellschaft
pg. 7/8
17.12.96 HL EH PD21
GaAs FET
CLY 5
________________________________________________________________________________________________________
Increased Power Handling Capability Pulsed Applications
GSM/PCN TDMA-Frame:
4,615ms
D=
tp T
=
0.577 ms = 0125 . 4.615ms
577s
Take value
Ptot max Ptot DC
from diagram permissible pulse load
-->
Ptot max Ptot DC
1.4
Ptot = 2W x 1.4 = 2.8W
DECT TDMA-Frame:
10ms
D=
tp T
=
10ms 4.615ms
= 0.0417
417s
Take value
Ptot max Ptot DC
from diagram permissible pulse load -->
Ptot max Ptot DC
1.5
Ptot = 2W x 1.5 = 3W
Siemens Aktiengesellschaft
pg. 8/8
17.12.96 HL EH PD21

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